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1N4007 Diode

1N4007 Diode
1N4007 Diode
1N4007 Diode
1N4007 Diode
1N4007 Diode
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  • Stock: In Stock
  • Model: TD-1N4007
  • Weight: 0.75g
1915 samples sold
Product Views: 2395
Ex Tax: ₹1.3
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The IN4007 diode is a device which allows current flow through only one direction. That is the current should always flow from the Anode to cathode. For 1N4007 Diode, the maximum current carrying capacity is 1A it withstand peaks up to 30A. Hence we can use this in circuits that are designed for less than 1A. The reverse current is 5uA which is negligible. The power dissipation of this diode is 3W.


  • Average forward current is 1A
  • Non-repetitive Peak  current is 30A
  • Reverse current is 5uA.
  • Peak repetitive Reverse voltage is 1000V
  • Power dissipation 3W
  • Available in DO-41 Package
  • High Surge Current Capability
  • Low Forward Voltage Drop
  • Diffused Junction
  • Surge Overload Rating to 30A Peak 
  • Low Reverse Leakage Current   
  • Low leakage current
  • Solder dip 275 °C max. 10 s, per JESD 22-B106 
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Mechanical Data:

  • Case: DO-41
  • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020D
  • Terminals: Finish - Bright Tin. Plated Leads Solderable per MIL-STD-202, Method 208
  • Polarity: Cathode Band
  • Marking: Type Number
  • Weight: 0.30 grams (Approximate)


  •  Can be used to prevent reverse polarity problem
  •  Half Wave and Full Wave rectifiers
  • Used as a protection device
  • Current flow regulators


Symbol Parameter Value Units
VRRM Peak Repetitive Reverse Voltage 1000 V
IF(AV) Average Rectified Forward Current  1 A
I2t Rating for fusing 30 A
IFSM Non- Repetitive Peak Forward Surge Current  3.7 A2sec
TJ Operating Junction Temperature 55 to +175
Tstg Storage Temperature Range 55 to +175

* Product Images are shown for illustrative purposes only and may differ from actual product.

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